研究员-凯发网

韩宁，工学博士，研究员，博士生导师。2004与2006年分别获得哈尔滨工业大学环境科学与工程专业学士与硕士学位。2010年在中国科学院过程工程研究所化学工程专业获得博士学位，2010年到2014年于香港城市大学物理及材料科学系做博士后研究后回所工作。主要从事氧化物半导体及iii-v半导体纳米材料的合成表征及其在传感器、微电子、催化等领域的应用研究。在nature communications, advanced materials, acs nano, applied catalysis b, acs sensors, sensors & actuators b等杂志发表中、英文学术论文150多篇，被引用5000多次，编写英文著作3章/节，申请20项（授权10项）中国及pct专利，主持完成国家重点研发计划、国家自然科学基金等课题/项目10项，完成空气净化器室温除甲醛催化剂技术转移转化1项，获得山东省自然科学二等奖及青岛市自然科学二等奖各1项。

1.l. zhang, j.w. yang, a.q. wang, j. guan, l.f. nie, g. j. fan, n. han*, y.f. chen*, high performance ozone decomposition spinel (mn,co)3o4 catalyst accelerating the rate-determining step, applied catalysis b: environmental, 2022, 303: 120927;

2.a. wang, l. zhang, m. rahimi, s. gong, l. nie, n. han*, y. chen*, defect engineering of zno for electron transfer in o3 catalytic decomposition, applied catalysis b environmental, 2020, 277: 119223;

3.d. li, c. lan, a. manikandan, s. yip, z. zhou, x. liang, l. shu, y.l. chueh, n. han*, j.c. ho*, ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires, nature communications, 2019, 10: 1664;

4.s.y. gong, z. xie, w. li, x. wu, n. han*, y.f. chen*, highly active and humidity resistive perovskite lafeo3 based catalysts for efficient ozone decomposition, applied catalysis b environmental, 2019, 241: 578-587;

5.j.m. sun, y.x. yin, m.m. han, z.x. yang*, c.y. lan, l.z. liu, y. wang, n. han*, l.f. shen, x.l. wu, j.c. ho*, unique nonpolar-oriented wurtzite inp nanowires with electron mobility approaching the theoretical limit, acs nano, 2018, 12(10): 10410-10418;

6.z.x. yang, l.z. liu, s.p. yip, d.p. li, l.f. shen, z.y. zhou, n. han*, t.f. hung, e.y. pun, x.l. wu, a.m. song, j.c. ho*, complementary metal oxide semiconductor-compatible, high-mobility, <111>-oriented gasb nanowires enabled by vapor-solid-solid chemical vapor deposition, acs nano, 2017, 11 (4), 4237-4246;

7.n. han*, z.x. yang, f.y. wang, s.p. yip, d.p. li, t.f. hung, y.f. chen, j.c. ho*, crystal orientation controlled photovoltaic properties of multi-layer gaas nanowire arrays, acs nano, 2016, 10, 6283-6290;

8.z.x. yang, s.p. yip, d. li, n. han*, g. dong, x. liang, l. shu, t.f. hung, x. mo, j.c. ho*, approaching the hole mobility limit of gasb nanowires, acs nano, 2015, 9(9), 9268-9275;

9.n. han, j. j. hou, f. y. wang, y. t. yen, s. p. yip, z. x. yang, t. f. hung, y. l. chueh, and j. c. ho*, gaas nanowires: from manipulation of defect formation to controllable electronic transport properties, acs nano, 2013, 7(10), 9138-9146;

10.n. han, f. y. wang, j. j. hou, s. p. yip, h. lin, f. xiu, m. fang, z. x. yang, x. l. shi, g. f. dong, t. f. hung, j. c. ho*. tunable electronic transport properties of metal-cluster-decorated iii-v nanowire transistors. advanced materials, 2013, 25, 4445-4451;